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| www..com STE140NF20D N-channel 200 V, 0.010 , 140 A, ISOTOP STripFETTM II with fast recovery diode Power MOSFET Preliminary Data Features Type STE140NF20D VDSS 200 V RDS(on) max < 0.012 ID 140 A Exceptional dv/dt capability Low gate charge 100% avalanche tested ISOTOP Application Switching applications Description This Power MOSFET is produced using STMicroelectronics' unique STripFETTM process, which is specifically designed to minimize input capacitance and gate charge. The STE140NF20D offers extremely fast switching performance thanks to the instrinsic fast body diode, making the device ideal for hard switching topologies. Figure 1. Internal schematic diagram Table 1. Device summary Marking 140NF20D Package ISOTOP Packaging Tube Order code STE140NF20D January 2009 Rev 1 1/10 www.st.com 10 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. www..com Contents STE140NF20D Contents 1 2 3 4 5 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Test circuit ................................................ 6 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 2/10 www..com STE140NF20D Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID(1) ID (1) IDM (2) (2) Absolute maximum ratings Parameter Drain-source voltage (VGS = 0) Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC=100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 200 20 140 260 560 500 4 25 - 55 to 150 Unit V V A A A W W/C V/ns C PTOT dv/dt(3) TJ Tstg Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. The value is rated according Rthj-pcb 2. Pulse width limited by safe operating area 3. ISD 30 A, di/dt TBD A/s, VDD 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Thermal resistance Parameter Thermal resistance junction-case Thermal resistance junction-ambient Value 0.25 40 Unit C/W C/W Table 4. Symbol IAR EAS Avalanche data Parameter Avalanche current, repetitive or not repetitive (1) Single pulse avalanche energy (2) Value TBD TBD Unit A mJ 1. Pulse width limited by Tjmax 2. Strating Tj = 25 C, ID = IAR, VDD = 50 V 3/10 www..com Electrical characteristics STE140NF20D 2 Electrical characteristics (TCASE = 25 C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS= 0 VDS = max rating, VDS =max rating @125 C VGS = 21 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 70 A 2 3 0.010 Min. 200 10 100 100 Typ. Max. Unit V A A nA V 4 0.012 Table 6. Symbol gfs Ciss Coss Crss Qg Qgs Qgd Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions ID = 140 A, VDS = 150 V VDS = 25 V, f=1 MHz, VGS=0 VDD=480 V, ID = 140A VGS= 4.5 V (see Figure 3) Min. Typ. TBD 9900 2000 450 390 TBD TBD pF pF pF nC nC nC Max. Unit 4/10 www..com STE140NF20D Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 100 V, ID= 70 A, RG=4.7 , VGS =10 V (see Figure 2) Min. Typ. TBD TBD TBD TBD Max. Unit ns ns ns ns Table 8. Symbol ISD ISDM(1) VSD (2) Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 70 A, VGS=0 ISD = 70 A, di/dt = 100 A/s, VDD= 100 V, Tj=150 C TBD TBD TBD Test conditions Min Typ. Max 140 560 1.6 Unit A A V ns nC A trr Qrr IRRM 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5% 5/10 www..com Test circuit STE140NF20D 3 Figure 2. Test circuit Switching times test circuit for resistive load Figure 3. Gate charge test circuit VDD 12V 2200 47k 100nF 1k RL VGS VD RG PW D.U.T. F 3.3 F VDD Vi=20V=VGMAX 2200 F IG=CONST 100 2.7k 47k PW 1k AM01469v1 D.U.T. VG AM01468v1 Figure 4. Test circuit for inductive load Figure 5. switching and diode recovery times Unclamped inductive load test circuit A D G S B 25 D.U.T. A FAST DIODE B A L=100H B D G 3.3 F 1000 F L VD 2200 F 3.3 F VDD VDD ID RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 6. Unclamped inductive waveform V(BR)DSS VD Figure 7. Switching time waveform ton tdon tr toff tdoff tf 90% IDM 90% 10% ID VDD VDD 0 10% VDS 90% VGS AM01472v1 0 10% AM01473v1 6/10 www..com STE140NF20D Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 7/10 www..com Package mechanical data STE140NF20D Table 9. Dim. ISOTOP mechanical data mm Min. Typ. Max. 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15 24.80 14.90 12.60 3.50 4.10 4.60 4 4 30.10 15.10 12.80 4.30 4.30 5 4.30 4.40 30.30 A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 11.80 8.90 7.80 0.75 1.95 37.80 31.50 25.15 23.85 P P1 S Figure 8. ISOTOP drawing 0041565_Rev_G 8/10 www..com STE140NF20D Revision history 5 Revision history Table 10. Date 27-Jan-2009 Document revision history Revision 1 First release Changes 9/10 www..com STE140NF20D Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10 |
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